Single crystal growth and characterization of narrow-gap (TlBiSe<sub>2</sub>)<sub>1-x</sub>-(TlBiS<sub>2</sub>) mixed crystals

ÖZER M., Paraskevopoulos K., Anagnostopoulos A., Kokkou S., Polychroniadis E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.13, sa.1, ss.86-92, 1998 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 13 Sayı: 1
  • Basım Tarihi: 1998
  • Doi Numarası: 10.1088/0268-1242/13/1/013
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.86-92
  • İstanbul Kültür Üniversitesi Adresli: Hayır

Özet

Large single crystals of the family of layered compounds (TlBiSe2)(1-x)-(TlBiS2)(x) were grown by the Bridgman-Stockbarger method for x = 0.0, 0.25, 0.50, 0.75 and 1.0. The structures of the as-grown single crystals were determined by x-ray diffraction and the lattice parameters and unit cell volumes were obtained. Infrared reflectivity measurements were also performed in the range 600-4000 cm(-1). From the analysis, the parameters epsilon(x), omega(rho) and Gamma were calculated. The electrical resistivities rho(parallel to) and rho(perpendicular to) (parallel and perpendicular to the layers, respectively) were measured as a function of temperature. From the rho(parallel to) measurements the plot of the Debye temperature versus x was calculated. An attempt was also made to correlate these physical properties with the compositional parameter x.