Single crystal growth and characterization of narrow-gap (TlBiSe<sub>2</sub>)<sub>1-x</sub>-(TlBiS<sub>2</sub>) mixed crystals
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.13, sa.1, ss.86-92, 1998 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 13 Sayı: 1
- Basım Tarihi: 1998
- Doi Numarası: 10.1088/0268-1242/13/1/013
- Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.86-92
- İstanbul Kültür Üniversitesi Adresli: Hayır
Özet
Large single crystals of the family of layered compounds (TlBiSe2)(1-x)-(TlBiS2)(x) were grown by the Bridgman-Stockbarger method for x = 0.0, 0.25, 0.50, 0.75 and 1.0. The structures of the as-grown single crystals were determined by x-ray diffraction and the lattice parameters and unit cell volumes were obtained. Infrared reflectivity measurements were also performed in the range 600-4000 cm(-1). From the analysis, the parameters epsilon(x), omega(rho) and Gamma were calculated. The electrical resistivities rho(parallel to) and rho(perpendicular to) (parallel and perpendicular to the layers, respectively) were measured as a function of temperature. From the rho(parallel to) measurements the plot of the Debye temperature versus x was calculated. An attempt was also made to correlate these physical properties with the compositional parameter x.